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Volumn 11, Issue 11, 2011, Pages 2895-2901

GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer

Author keywords

AlInN; GaN; photodetectors

Indexed keywords

ALINN; DETECTIVITY; GAN; INTERMEDIATE LAYERS; LATTICE-MATCHED; LOW TEMPERATURES; NOISE LEVELS; REJECTION RATIOS; REVERSE LEAKAGE CURRENT; SCHOTTKY BARRIERS; THREE ORDERS OF MAGNITUDE; ULTRA-VIOLET;

EID: 80055057705     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2011.2143402     Document Type: Article
Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.