High light-extraction GaN-based vertical LEDs with double diffuse surfaces

IEEE Journal of Quantum Electronics

Volumn 42, Issue 12, 2006, Pages 1196-1201

  Lee, Ya Ju ^a,b   Kuo, Hao Chung ^a   Lu, Tien Chang ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

Double diffuse surfaces; GaN; Light emitting diodes (LEDs); Light extraction efficiency

Indexed keywords

GALLIUM NITRIDE; LIGHT SCATTERING; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS;

DOUBLE DIFFUSE SURFACES; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; OMNIDIRECTIONAL REFLECTOR;

LIGHT EMITTING DIODES;

EID: 33751382323     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.883468     Document Type: Article

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