Leakage current analysis of nitride-based photodetectors by emission microscopy inspection

IEEE Sensors Journal

Volumn 8, Issue 9, 2008, Pages 1506-1510

  Chiou, Y Z ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Emission microscopy; Etch; Metal semiconductor metal (MSM); p i n; Photodetectors

Indexed keywords

ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; INSPECTION; LEAKAGE CURRENTS; MARKOV PROCESSES; METAL RECOVERY; METALS; NITRIDES; OPTOELECTRONIC DEVICES; PHOTORESISTS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS;

EMISSION MICROSCOPY; ETCH; GAN METAL-SEMICONDUCTOR-METAL; ICP ETCHING; INDUCTIVELY COUPLED PLASMA ETCHING; LEAKAGE CURRENT ANALYSIS; LEAKAGE PROPERTIES; METAL-SEMICONDUCTOR-METAL (MSM); P-I-N; SURFACE DAMAGES;

PHOTODETECTORS;

EID: 48849083235     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2008.920702     Document Type: Article

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