High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 485-489

  Wang, C K ^a   Chang, S J ^a   Su, Y K ^a   Chiou, Y Z ^b   Chang, C S ^a   Lin, T K ^a   Liu, H L ^a   Tang, J J ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FILM GROWTH; MAGNETRON SPUTTERING; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPURIOUS SIGNAL NOISE; TRANSPARENCY; TUNGSTEN; ULTRAVIOLET DETECTORS;

CONTACT ELECTRODES; METAL-SEMICONDUCTOR-METAL (MSM); NOISE EQUIVALENT POWER (NEP); RICHARDSON CONSTANT;

GALLIUM NITRIDE;

EID: 18744403360     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/002     Document Type: Article

References (26)

1. Chiou Y Z, Su Y K, Chang S J, Gong J, Lin Y C, Liu S H and Chang C S 2003 High detectivity InGaN-GaN multiquantum well p-n junction photodiodes IEEE J. Quantum Electron. 39 681-5
2. Monroy E, Muñoz E, Sánchez F J, Calley F, Calleja E, Beaumont B, Gibart P, Mũoz J A and Cussó F 1998 High-performance GaN p-n junction photodetectors for solar ultraviolet applications Semicond. Sci. Technol. 13 1042-6
3. Xu G Y, Salvador A, Kim W, Fan Z, Lu C, Tang H, Morkoc H, Smith G, Estes M, Goldenberg B, Yang W and Krishnankutty S 1997 High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures Appl. Phys. Lett. 71 2154-6
4. Biyikli N, Kimukin I, Aytur O and Ozbay E 2004 Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity IEEE Photon. Technol. Lett. 16 1718-20
5. 1-xN p-i-n photodiodes Semicond. Sci. Technol. 19 1259-62
6. Parish G, Keller S, Kozodoy P, Ibbetson J P, Marchand H, Fini P T, Fleischer S B, DenBaars S P, Mishra U K and Tarsa E J 1999 High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN Appl. Phys. Lett. 75 247-9
7. Osinsky A, Gangopadhyay S, Gaska R, Williams B, Khan M A, Kuksenkov D and Temkin H 1997 Low noise p-π-n GaN ultraviolet photodetectors Appl. Phys. Lett. 71 2334-6
8. Katz O, Garber V, Meyler B, Bahir G and Salzman J 2002 Anisotropy in detectivity of GaN Schottky ultraviolet detectors: comparing lateral and vertical geometry Appl. Phys. Lett. 80 347-9
9. 2-passivated lateral-geometry GaN transparent Schottky-barrier detectors Appl. Phys. Lett. 77 863-5
10. Katz O, Bahir G and Salzman J 2004 Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors Appl. Phys. Lett. 84 4092-4
11. Katz O, Garber V, Meyler B, Bahir G and Salzman J 2001 Gain mechanism in GaN Schottky ultraviolet detectors Appl. Phys. Lett. 79 1417-9
12. Monroy E, Palacios T, Hainaut O, Omnes F, Calle F and Hochedez J F 2002 Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection Appl. Phys. Lett. 80 3198-200
13. Mosca M, Reverchon J L, Omnes F and Duboz J Y 2004 Effects of the buffer layers on the performance of (Al,Ga)N ultraviolet photodetectors Appl. Phys. Lett. 95 4367-70
14. Su Y K, Chiou Y Z, Juang F S, Chang S J and Sheu J K 2001 GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals Japan. J. Appl. Phys. 40 2996-9
15. Palacios T, Monroy E, Calle F and Omnes F 2002 High-responsivity submicron metal-semiconductor-metal ultraviolet detectors Appl. Phys. Lett. 81 1902-4
16. Lia J, Xu Y, Hsiang T Y and Donaldson W R 2004 Picosecond response of gallium-nitride metal-semiconductor-metal photodetectors Appl. Phys. Lett. 84 2091-3
17. Pau J L, Rivera C, Munoz E, Calleja E, Schuhle U, Frayssinet E, Beaumont B, Faurie J P and Gibart P 2004 Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet J. Appl. Phys. 95 8275-9
18. Chiou Y Z, Chiou J R, Su Y K, Chang S J, Huang B R, Chang C S and Lin Y C 2003 The characteristics of different transparent electrodes on GaN photodetectors Mater. Chem. Phys. 80 201-4
19. Chiou Y Z and Tang J J 2004 GaN photodetectors with transparent indium tin oxide electrodes Japan. J. Appl. Phys. 43 4146-9
20. Wang C K, Chang S J, Su Y K, Chang C S, Chiou Y Z, Kuo C H, Lin T K, Ko T K and Tang J J 2004 GaN MSM photodetectors with TiW transparent electrodes Mater. Sci. Eng. B. 112 25-9
21. Chen C H, Chang S J, Su Y K, Chi G C, Chi J Y, Chang C A, Sheu J K and Chen J F 2004 GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts IEEE Photon. Technol. Lett. 13 848-50
22. Palacios T, Calle F, Monroy E and Omnes F 2002 Novel approaches for metal-semiconductor-metal GaN UV photodetectors Phys. Status Solidi a 194 476-9
23. 2 Schottky contacts J. Electochem. Soc. 151 G190-5
24. 2 Schottky contact Appl. Phys. Lett. 71 4655-7
25. Norde H 1979 A modified forward I-V plot for Schottky diodes with high series resistance J. Appl. Phys. 50 5052-3
26. Bohlin K E 1986 Generalized Norde plot including determination of the ideality factor J. Appl. Phys. 60 1223-4