High-detectivity nitride-based MSM Photodetectors on in GaN-GaN multiquantum well with the unactivated Mg-doped GaN layer

IEEE Journal of Quantum Electronics

Volumn 43, Issue 11, 2007, Pages 1060-1064

  Chang, Ping Chuan ^a   Yu, C L ^b   Chang, S J ^b   Lee, K H ^c   Liu, C H ^a   Wu, S L ^a  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Ingan gan multiquantum well (mqw); Metalsemiconductor metal (msm); Unactivated mg doped gan

Indexed keywords

APPLIED BIAS; DETECTIVITY; DEVICE CHARACTERISTICS; GAN CAP LAYERS; GAN LAYERS; METAL SEMICONDUCTOR METAL; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MG-DOPED; MSM PHOTODETECTOR; MULTIQUANTUM WELLS; NOISE EQUIVALENT POWER; ORDERS OF MAGNITUDE; REJECTION RATIOS; RESPONSIVITY;

GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SECONDARY BATTERIES;

GALLIUM ALLOYS;

EID: 65949114040     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.907249     Document Type: Article

References (24)

1. E. Munoz, E. Monroy, J. L. Pau, F. Calle, F. Omnes, and P. Gibart, "III nitrides and UV detection," J. Phys. Condens. Matter, vol.13, pp. 7115-7137, 2001.
2. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay, "Solar-blind A1GaNbased p-i-n photodiodes with low dark current and high detectivity," IEEE Photon. Technol. Lett., vol.16, no.7, pp. 1718-1720, Jul. 2004.
3. N. Biyikli, I. Kimukin, T. Tut, T. Kartaloglu, O. Aytur, and E. Ozbay, "High-speed characterization of solar-blind AlxGal -xN p-i-n photodiodes," Semicond. Sei. Technol, vol.19, pp. 1259-1262, 2004.
4. C. L. Yu, S. J. Chang, P. C. Chang, Y. C. Lin, and C. T. Lee, Nitridebased ultraviolet Schottky barrier photodetectors with a LT-AlN cap layers," Superlattices Microstruct., 40, 470-475, 2006. (Pubitemid 44855491)
5. C. L. Yu, C. H. Chen, S. J. Chang, and P. C. Chang, "GaN metalsemiconduetor-metal ultraviolet photodetectors with Ir/Pt contact electrodes," J. Electrockem. Soc, 154, J71-J72, 2007. (Pubitemid 46094541)
6. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, B. R. Huang, and P. C. Chen, "High UV/visible rejection contrast AlGaN/GaN MIS photodetectors," Thin Solid Films, vol.498, pp. 133-136, 2006.
7. 2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors," J. Electron. Mater., vol.32, pp. 395-399, 2003.
8. E. Monroy, F. Calle, J. L. Pau, E. Munoz, and F. Omnes, "Low-noise metal-insulator-semiconductor UV photodiodes based on GaN," Electron. Lett., vol.36, pp. 2096-2098, 2000.
9. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. F. Chen, C. S. Chang, S. H. Liu, Y. C. Lin, and C. H. Chen, Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors," Jpn. J. Appl. Phys., 41, 3643-3645, 2002. (Pubitemid 34962185)
10. S. Nakamura and G. Fasol, The Blue Laser Diode, 1st ed. Berlin, Germany: Springer-Verlag, 1997, ch. 7.
11. C. Rivera, J. L. Pau, J. Pereiro, and E. Munoz, "Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures," Superlattices Microstruct., vol.36, pp. 849-857, 2004.
12. C. Rivera, J. L. Pau, A. Navarro, and E. Munoz, "Photoresponse of (In,Ga)N-GaN multiple-quantum-well structures in the visible and UVA ranges," IEEE J. Quantum Electron., vol.42, no.1, pp. 51-58, Jan. 2006.
13. C. Rivera, J. L. Pau, F. B. Naranjo, and E. Munoz, "Novel photodetectors based on InGaN/GaN multiple quantum wells," Phys. Stat. Sol. (a), vol.201, pp. 2658-2662, 2004.
14. 2 layers," Jpn. J. Appl. Phys., vol.43, pp. 2008-2010, 2004.
15. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, "Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes," IEEEJ. Quantum Electron., vol.38, no.5, pp. 446-450, May 2002.
16. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M.. Tsai, "400-nm InGaN-GaN and InGaNA1GaN multiquantum well light-emitting diodes," IEEE J. Sel. Top. Quantum Electron., vol.8, no.4, pp. 744-748, Jul./Aug. 2002.
17. P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti, S. P. DenBaars, and J. S. Speck, "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor desposition," Appl. Phys. Lett., vol.72, pp. 2247-2249, 1998.
18. E. G. Brazel, M. A. Chin, and V. Narayanamurti, "Direct observation of localized high current densities in GaN films," Appl. Phys. Lett., vol.74, pp. 2367-2369, 1999.
19. J. W. P. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S. N. G. Chu, A. M.. Sergent, R. N. Kleiman, L. N. Pfeiffer, and R. J. Molnar, Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes," Appl. Phys. Lett., 78, 1685-1687, 2001. (Pubitemid 33598270)
20. S. J. Chang, C. L. Yu, P. C. Chang, Y. C. Lin, and C. H. Chen, Nitridebased MIS-like diodes with semi-insulating Mg-doped GaN cap layer," Semicond. Sei. Technol., 21, 1422-1424, 2006. (Pubitemid 44418807)
21. M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, and K. Kohler, "Photocurrent gain mechanisms in metalsemiconductor-metal photodetectors," Solid State Electron., vol.37, pp. 333-340, 1994.
22. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, "Gain mechanism in GaN Schottky ultraviolet detectors," Appl. Phys. Lett., vol.79, pp. 1417-1419, 2001.
23. J. C. Camino, T. Li, P. A. G. rudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, "Comprehensive characterization of metal-semiconductor- metal ultraviolet photodetectors fabricated on single-crystal GaN," J. Appl. Phys., vol.83, pp. 6148-6160, 2003.
24. H. Jiang, N. Nakata, G. Y. Zhao, H. Ishikawa, C. L. Shao, T. Egawa, T. Jimbo, and M. Umeno, "Back-illuminated MSM UV photodetector with high internal gain," Jpn. J. Appl. Phys., vol.40, pp. L505-507, 2001.