GaN schottky barrier photodetectors

IEEE Sensors Journal

Volumn 10, Issue 10, 2010, Pages 1609-1614

  Chang, S J ^a   Wang, S M ^a   Chang, P C ^b   Kuo, C H ^c   Young, S J ^d   Chen, T P ^a   Wu, S L ^e   Huang, B R ^f  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^e CHENG SHIU UNIVERSITY   (Taiwan)

^f NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Nanorod template; noise; photodetector; ultraviolet

Indexed keywords

APPLIED BIAS; DETECTIVITY; NOISE; NOISE EQUIVALENT POWER; PHOTOCONDUCTIVE GAINS; REJECTION RATIOS; SAPPHIRE SUBSTRATES; SCHOTTKY BARRIERS;

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES;

NANORODS;

EID: 77955399652     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2010.2045889     Document Type: Article

References (20)

1. T. Mukai, M. Yamada, and S. Nakamura, "Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes," Jpn. J. Appl. Phys., vol.37, pp. L1358-L1361, 1998.
2. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol.8, pp. 278-283, Mar./Apr. 2002.
3. S. J. Chang, C. H. Kuo, Y. K. Su, L. W.Wu, J. K. Sheu, T. C.Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400 nm InGaN/GaN and InGaN/ AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol.8, no.4, pp. 744-748, Jul./Aug. 2002.
4. W. H. Lan, "Wavelength shift of gallium nitride light emitting diode with p-down structure," IEEE Trans. Electron. Devices, vol.52, pp. 1217-1219, Jun. 2005.
5. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay, "Solar-blind AlGaNbased p-i-n photodiodes with low dark current and high detectivity," IEEE Photon. Technol. Lett., vol.16, pp. 1718-1720, Jul. 2004.
6. O. Katz, V. Garber, B.Meyler, G. Bahir, and J. Salzman, "Gain mechanism in GaN Schottky ultraviolet detectors," Appl. Phys. Lett., vol.79, pp. 1417-1419, 2001. (Pubitemid 33666192)
7. J. T. Torvik, J. I. Pankove, E. Iliopoulos, H. M. Ng, and T. D. Moustakas, "Optical properties of GaN grown over on SiC substrates by molecular beam epitaxy," Appl. Phys. Lett., vol.72, pp. 244-246, 1998.
8. S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. L. Yu, C. H. Kuo, and S. L. Wu, "GaN-based Schottky barrier photodetectors with a 12-pair -GaN buffer layer," IEEE J. Quantum Electron., vol.44, pp. 916-921, 2008.
9. T. Mukai, K. Takekawa, and S. Nakamura, "InGaN-based blue lightemitting diodes grown on epitaxially laterally overgrown GaN substrates," Jpn. J. Appl. Phys., vol.37, pp. L839-L841, 1998.
10. A. Usui, H. Sunakawa, A. Sakai, and A. A. Yamaguchi, "Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy," Jpn. J. Appl. Phys., vol.36, pp. L899-L902, 1997.
11. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimuto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulation- doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett., vol.72, pp. 211-213, 1998.
12. S. C. Ling, C. L. Chao, J. R. Chen, P. C. Liu, T. S. Ko, T. C. Lu, H. C. Kuo, S. C. Wang, S. J. Cheng, and J. D. Tsay, "Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density," Appl. Phy. Lett., vol.94, 2009.
13. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. Denbaars, and J. S. Speck, "Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films," Appl. Phys. Lett., vol.68, pp. 643-645, 1996.
14. S. K. Cheung and N. W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics," Appl. Phys. Lett., vol.49, pp. 85-87, 1986.
15. S. Karmalkar, D. M. Sathaiya, and M. S. Shur, "Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors," Appl. Phys. Lett., vol.82, pp. 3976-3978, 2003.
16. J. A. Garrido, E. Monroy, I. Izpura, and E. Munoz, "Photoconductive gain modeling of GaN photodetectors," Semicond. Sci. Technol., vol.13, pp. 563-568, 1998.
17. E. Monroy, F. Calle, E. Munoz, F. Omnes, P. Gibart, and J. A. Munoz, "Solar-blind-based metal-semiconductor-metal ultraviolet photodetectors," Electron. Lett., vol.36, pp. 1581-1583, 2000.
18. S. R. Morrison, " noise from levels in a linear or planar array. III. Trapped carrier fluctuations at dislocations," J. Appl. Phys., vol.72, pp. 4104-4112, 1992.
19. Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. A. Khan, D. Kuksenkov, and H. Temkin, "Schottky barrier detectors on GaN for visible-blind ultraviolet detection," Appl. Phys. Lett., vol.70, pp. 2277-2279, 1997. (Pubitemid 127643688)
20. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 747.