AlGaN/GaN Schottky Barrier UV Photodetectors With a GaN Sandwich Layer

IEEE Sensors Journal

Volumn 9, Issue 7, 2009, Pages 814-819

  Lee, K H ^a   Chang, P C ^a   Wang, Y C ^a   Yu, C L ^a   Chang, S J ^b   Wu, S L ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Sandwich layer; secondary GaN buffer; ultraviolet (UV)

Indexed keywords

EID: 85008057917     PISSN: 1530437X     EISSN: 15581748     Source Type: Journal    
DOI: 10.1109/JSEN.2009.2022565     Document Type: Article

References (28)

1. J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, “Comprehensive characterization of metal-semiconductor- metal ultraviolet photodetectors fabricated on single-crystal GaN”, J. Appl. Phys., vol. 83, no. 11, pp. 6148–6160, 1998.
2. H. Morkoç, A. D. Carlo, and R. Cingolani, “GaN-based modulation doped FETs and UV detectors”, Solid-State Electron., vol. 46, pp. 157–202, 2002.
3. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry”, Appl. Phys. Lett., vol. 80, no. 3, pp. 347–349, 2002.
4. P. C. Chang and C. L. Yu, “InGaN/GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer”, Appl. Phys. Lett., vol. 91, p. 141113, 2007.
5. P. C. Chang, C. L. Yu, S. J. Chang, Y. C. Lin, and S. L.Wu, “Low-noise and high-detectivity GaN UV photodiodes with a low-temperature AlN cap layer”, IEEE Sensors J., vol. 7, no. 9, pp. 1289–1292, Sep. 2007.
6. J. Zhao, Z. Lin, T. D. Corrigan, Z. Wang, Z. You, and Z. Wang, “Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures”, Appl. Phys. Lett., vol. 91, no. 17, p. 173507, 2007.
7. 0.75N /GaN heterostructures”, Physica B, vol. 399, pp. 132–137, 2007.
8. G. Franssen, J. A. Plesiewicz, L. H. Dmowski, P. Prystawko, T. Suski, W. Krupczynski, R. Jachymek, P. Perlin, and M. Leszczynski, “Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN/GaN heterostructures determined by means of capacitancevoltage characterization”, J. Appl. Phys., vol. 100, p. 113712, 2006.
9. J. J. Huang, K. C. Shen, W. Y. Shiao, Y. S. Chen, T. C. Liu, T. Y. Tang, C. F. Huang, and C. C. Yang, “Improved a-plane GaN quality grown with flow modulation epitaxy and epitaxial lateral overgrowth on r-plane sapphire substrate”, Appl. Phys. Lett., vol. 92, p. 231902, 2008.
10. I. H. Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, and S. J. Pearton, “Deep-level studies in GaN layers grown by epitaxial lateral overgrowth”, Thin Solid Films, vol. 516, pp. 2035–2040, 2008.
11. J. Tourret, O. Gourmala, A. Trassoudaine, Y. Andre, E. Gil, D. Castelluci, and R. Cadoret, “Low-cost high-quality GaN by one-step growth”, J. Cryst. Growth, vol. 310, pp. 924–929, 2008.
12. N. Takahashi, S. Matsuki, A. Koukitu, and H. Seki, “Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer”, Jpn. J. Appl. Phys., vol. 36, pp. L1133–L1135, 1997.
13. M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki, “Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN”, Jpn. J. Appl. Phys., vol. 37, pp. L316–L318, 1998.
14. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki, “Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature- grown GaN”, MRS Internet J. Nitride Semicond. Res., vol. 4S1, p. G10.1, 1999.
15. H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. W. Yang, and M. A. Khan, “AlN/AlGaN superlattices as dislocation filter for lowthreading- dislocation thick AlGaN layers on sapphire”, Appl. Phys. Lett., vol. 81, no. 4, pp. 604–606, 2002.
16. X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. Denbarrs, and J. S. Speck, “Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN”, Appl. Phys. Lett., vol. 68, no. 10, pp. 1371–1373, 1996.
17. P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti, S. P. Den- Baars, and J. S. Spect, “Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor desposition”, Appl. Phys. Lett., vol. 72, pp. 2247–2249, 1998.
18. J. W. P. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, and R. J. Molnar, “Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes”, Appl. Phys. Lett., vol. 78, pp. 1685–1687, 2001.
19. S. J. Rosner, E. C. Carr,M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition”, Appl. Phys. Lett., vol. 70, no. 4, pp. 420–422, 1997.
20. N. G. Weimann and L. F. Eastman, “In-plane imperfections in GaN studied by x-ray diffraction”, Appl. Phys. Lett., vol. 83, no. 7, pp. 3656–3659, 1998.
21. M. E. Vickers, M. J. Kappers, R. Datta, C. McAleese, T. M. Smeeton, F. D. G. Rayment, and C. J. Humphreys, “In-plane imperfections in GaN studied by x-ray diffraction”, J. Phys. D-Appl. Phys., vol. 38, pp. A99–A104, 2005.
22. H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, “X-ray diffraction analysis of the defect structure in epitaxial GaN”, Appl. Phys. Lett., vol. 77, no. 14, pp. 2145–2147, 2000.
23. O. Katz, V. Garber, B.Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors”, Appl. Phys. Lett., vol. 79, no. 10, pp. 1417–1419, 2001.
24. J. C. Carrano, T. Li, D. L. Brown, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, “Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN”, Appl. Phys. Lett., vol. 83, no. 11, pp. 6148–6160, 1998.
25. S. K. Zhang, W. B. Wang, I. Shtau, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain”, Appl. Phys. Lett., vol. 81, no. 25, pp. 4862–4864, 2002.
26. F. N. Hooge, J. Kedzia, and L. K. J. Vandamme, “Boundary scattering and 1/f noise”, J. Appl. Phys., vol. 50, pp. 8087–8089, 1979.
27. S. R. Morrison, “l/f noise from levels in a linear or planar array. III. Trapped carrier fluctuations at dislocations”, J. Appl. Phys., vol. 72, no. 9, pp. 4104–4112, 1992.
28. D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Low-frequency noise and performance of GaN p-n junction photodetectors”, in Proc. Tech. Digest Int. Electron Devices Meeting, 1997, pp. 759–762.