Optimization of InGaN-GaN MQW photodetector structures for high-responsivity performance

IEEE Journal of Quantum Electronics

Volumn 45, Issue 6, 2009, Pages 617-622

  Pereiro, Juan ^a   Rivera, Carlos ^a   Navarro, Álvaro ^a   Muñoz, Elías ^a   Czernecki, Robert ^b   Grzanka, Szymon ^b   Leszczynski, Mike ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

P i n photodiodes; Photodetectors; Quantum wells (QWs); Semiconductor device modeling

Indexed keywords

BLOCKING LAYERS; COLLECTION EFFICIENCY; DEPLETION REGION; DEVICE DESIGN; DOPING LEVELS; MULTIPLE QUANTUM WELLS; P-I-N PHOTODIODES; PHOTODETECTOR STRUCTURE; QUANTUM WELLS (QWS); RESPONSIVITY; SEMICONDUCTOR DEVICE MODELING; TRANSPORT MECHANISM;

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 66149094315     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2013140     Document Type: Article

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