Raman spectrum curve fitting for estimating surface stress distribution in single-crystal silicon microstructure

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Komatsubara, Mamoru ^a   Namazu, Takahiro ^a   Nagai, Yuji ^a   Inoue, Shozo ^a   Naka, Nobuyuki ^b   Kashiwagi, Shinsuke ^b   Ohtsuki, Kunio ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b HORIBA LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONVEX STRUCTURE; FINITE ELEMENT ANALYSIS; LASER RAMAN; LINEAR RELATIONSHIPS; MICRO-SCALES; NONUNIFORM STRESS DISTRIBUTION; PEAK POSITION; RAMAN PEAK SHIFTS; RAMAN SPECTRUM; SINGLE CRYSTAL SILICON; STRESS DISTRIBUTION; SURFACE STRESS DISTRIBUTIONS; TENSILE TESTERS; UNIAXIAL TENSILE LOADING;

CRYSTAL MICROSTRUCTURE; FINITE ELEMENT METHOD; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STRESS ANALYSIS; STRESS CONCENTRATION; SURFACE PROPERTIES; TENSILE STRESS;

CURVE FITTING;

EID: 77952525596     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C021     Document Type: Article

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