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Volumn , Issue , 2008, Pages 853-858

Reliability tests for a three dimensional chip stacking structure with through silicon via connections and low cost

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SCALE PACKAGES; CMOS INTEGRATED CIRCUITS; COMPUTER NETWORKS; INTEGRATED CIRCUIT MANUFACTURE; LASERS; PRINTED CIRCUIT BOARDS; PRINTED CIRCUIT MANUFACTURE; PRINTED CIRCUITS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; TECHNOLOGY; TESTING; THREE DIMENSIONAL; WAFER BONDING;

EID: 51349096634     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2008.4550076     Document Type: Conference Paper
Times cited : (41)

References (9)
  • 2
    • 0031270573 scopus 로고    scopus 로고
    • Three dimensional metallization for vertically integrated circuits
    • P. Ramm, et al, "Three dimensional metallization for vertically integrated circuits," Microelectronic Engineering, Vol. 37-38 (1997), pp. 39-47.
    • (1997) Microelectronic Engineering , vol.37-38 , pp. 39-47
    • Ramm, P.1
  • 5
    • 33845572141 scopus 로고    scopus 로고
    • An Innovative Chip-to-Wafer and Wafer-to-Wafer Stacking
    • May
    • W. C. Lo, et al., "An Innovative Chip-to-Wafer and Wafer-to-Wafer Stacking," Proc. 56th Electronic Components and Technology Conf, May 2006, pp. 337-342.
    • (2006) Proc. 56th Electronic Components and Technology Conf , pp. 337-342
    • Lo, W.C.1
  • 7
    • 33845582061 scopus 로고    scopus 로고
    • Embedded Active Device Packaging Technology for Next-Generation Chip-in-Substrate Package, CiSP
    • May
    • C.T. Ko, et al., "Embedded Active Device Packaging Technology for Next-Generation Chip-in-Substrate Package, CiSP," Proc. 56th Electronic Components and Technology Conf, May 2006, pp. 322-329
    • (2006) Proc. 56th Electronic Components and Technology Conf , pp. 322-329
    • Ko, C.T.1
  • 8
    • 0011960847 scopus 로고    scopus 로고
    • Cu bump interconnections in 20 μm pitch utilizing electroless tin-cap on 3D stacked LSI
    • Nov
    • Tomita, Y., et al.,"Cu bump interconnections in 20 μm pitch utilizing electroless tin-cap on 3D stacked LSI," Electronic Materials and Packaging, Nov. 2001, pp.107 -114
    • (2001) Electronic Materials and Packaging , pp. 107-114
    • Tomita, Y.1
  • 9
    • 15944399686 scopus 로고    scopus 로고
    • Growth behavior of compound layers in Sn/Cu/Sn diffusion couples during annealing at 433-473 K
    • Apr 15
    • Takenaka T., et al ., "Growth behavior of compound layers in Sn/Cu/Sn diffusion couples during annealing at 433-473 K," Materials Science and Engineering A, Vol 396, No. 1-2, Apr 15, 2005, p 115-123
    • (2005) Materials Science and Engineering A , vol.396 , Issue.1-2 , pp. 115-123
    • Takenaka, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.