Performanace and reliability analysis of 3D-integration structures employing through silicon via (TSV)

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 682-687

  Karmarkar, Aditya P ^a   Xu, Xiaopeng ^b   Moroz, Victor ^b  

^a Synopsys India Pvt Ltd   (India)

^b SYNOPSYS INC   (United States)

Author keywords

3D integration; Carrier mobility; Design for manufacturability; Mechancial reliability; Thermomechanical stress

Indexed keywords

3D-INTEGRATION; BARRIER LAYERS; CRACK NUCLEATION; DESIGN FOR MANUFACTURABILITY; DEVICE PERFORMANCE; INDUCED STRESS; MATERIAL CHOICE; MECHANCIAL RELIABILITY; STRESS DISTRIBUTION; STRUCTURE RELIABILITY; THERMAL MISMATCH STRESS; THERMOMECHANICAL STRESS; THROUGH-SILICON-VIA;

CARRIER MOBILITY; MACHINE DESIGN; QUALITY ASSURANCE; STRESS CONCENTRATION; THERMOMECHANICAL TREATMENT; THREE DIMENSIONAL;

RELIABILITY ANALYSIS;

EID: 70449088867     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173329     Document Type: Conference Paper

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