Control of sidewall slope in silicon vias using SF 2 O 2plasma etching in a conventional reactive ion etching tool

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 2226-2231

  Figueroa, R F ^a   Spiesshoefer, S ^a   Burkett, S L ^b   Schaper, L ^b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b 3202 Bell Engineering Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHAMBER PRESSURE; CHEMICAL PROCESSES; SIDEWALL;

ELECTRODES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON; SULFUR COMPOUNDS;

ANISOTROPY;

EID: 31144461233     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2041654     Document Type: Conference Paper

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