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Volumn 40, Issue 12, 2009, Pages 1849-1857

Measuring stresses in thin metal films by means of Raman microscopy using silicon as a strain gage material

Author keywords

Grain growth; Raman microscopy; Silicon; Thermal stresses; Thin film

Indexed keywords

AMORPHOUS SILICON; ELECTROMECHANICAL DEVICES; FAILURE (MECHANICAL); FILM GROWTH; GRAIN GROWTH; MEMS; METALLIC FILMS; MICROELECTRONICS; STRAIN GAGES; THERMAL EXPANSION; THERMAL STRESS;

EID: 72249118223     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.2332     Document Type: Article
Times cited : (10)

References (50)
  • 23
    • 85153295177 scopus 로고    scopus 로고
    • FB Materials Science, Ceramics Group: TU Darmstadt
    • S. L. Dos Santos e Lucato, Lince v. 231. 1998, FB Materials Science, Ceramics Group: TU Darmstadt.
    • (1998) , vol.231
    • Dos Santos Lucato, S.L.1    Lince, V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.