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Volumn 105, Issue 11, 2009, Pages

Spatially and tensor-resolved Raman analysis for the determination of phonon deformation potentials on the microscopic scale in Si single-crystal

(3) Miyatake, Takahiro a Porporati, Alessandro Alan b Pezzotti, Giuseppe b

a PANASONIC CORPORATION (Japan)

b KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT STRESS; CROSS-POLARIZED; DEFORMATION POTENTIAL; EXPERIMENTAL METHODS; HIGH REFRACTIVE INDEX; IN-SITU ASSESSMENT; INDEPENDENT VALUES; MICROSCOPIC SCALE; ORIENTED SAMPLE; QUANTITATIVE DETERMINATIONS; RAMAN ANALYSIS; RAMAN FREQUENCY SHIFTS; SILICON SURFACES; VICKERS; VISIBLE WAVELENGTHS;

DEFORMATION; REFRACTIVE INDEX; SILICON; TENSORS;

PHONONS;

EID: 67649556973 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3133197 Document Type: Article

Times cited : (5)

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