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Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 569-573

Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films

(5) Tang, W M a Greiner, M T a Lu, Z H a,b Ng, W T a Nam, H G c

a UNIVERSITY OF TORONTO (Canada)

b YUNNAN UNIVERSITY (China)

c SunMoon University (South Korea)

Author keywords

Metal oxide semiconductor capacitor; Thin films; Threshold voltage; UV ozone treatment; X ray photoelectron spectroscopy; Zinc oxide

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; DEPLETION REGION; INVERSION REGIONS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PHYSICAL MECHANISM; RADIO FREQUENCIES; RADIO-FREQUENCY-MAGNETRON SPUTTERING; UV-OZONE; UV-OZONE TREATMENT; ZNO; ZNO SURFACE; ZNO THIN FILM;

DIELECTRIC DEVICES; ELECTRONS; HAFNIUM OXIDES; METALLIC FILMS; MOS CAPACITORS; OPTICAL FILMS; OXYGEN VACANCIES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

OZONE;

EID: 80054039403 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.07.004 Document Type: Article

Times cited : (24)

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