Interface-layer formation in microcrystalline Si:H growth on ZnO substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2400-2409

  Fujiwara, Hiroyuki ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

ATTENUATED TOTAL REFLECTION (ATR) SPECTROSCOPY;

CRYSTAL GROWTH;

EID: 0037349191     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1539920     Document Type: Article

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