Formation of the charge selective contact in solar cells with extremely thin absorber based on ZnO-nanorod/ In2 S3 /CuSCN

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Dittrich, T ^a   Kieven, D ^a   Belaidi, A ^a   Rusu, M ^a   Tornow, J ^a   Schwarzburg, K ^a   Lux Steiner, M Ch ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ANNEALING; COPPER; PHOTOVOLTAIC CELLS; SEMICONDUCTING ZINC COMPOUNDS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SWITCHING CIRCUITS; ZINC OXIDE;

CU DIFFUSIONS; EXTERNAL QUANTUM EFFICIENCIES; EXTREMELY THIN ABSORBERS; IDEALITY FACTORS; LIGHT INTENSITIES; OPEN CIRCUITS; POWER COEFFICIENTS; POWER LAWS; SATURATION CURRENT DENSITIES; SHORT-CIRCUIT CURRENT DENSITIES; TEMPERATURE DEPENDENCES; TEMPERATURE DEPENDENCIES; TEMPERATURE DEPENDENTS; ZNO;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 60449105554     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077259     Document Type: Article

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