Effect of high-energy electron beam irradiation on the properties of AZO thin films prepared by rf magnetron sputtering

Thin Solid Films

Volumn 518, Issue 22, 2010, Pages 6236-6240

  Yun, Eui Jung ^a   Jung, Jin Woo ^a   Ko, Kyung Nam ^a   Hwang, Jongha ^b   Lee, Byung Cheol ^b   Jung, Myung Hee ^c  

^a Hoseo University   (South Korea)

^b Korea Atomic Energy Research Institute   (South Korea)

^c Anyang University   (South Korea)

Author keywords

Al doped ZnO (AZO) films; Atomic force microscope; Hall measurements; High energy electron beam irradiation (HEEBI); Photoluminescence; Radio frequency (rf) magnetron sputtering; X ray photoelectron spectroscopy

Indexed keywords

AL-DOPED ZNO (AZO) FILMS; ATOMIC FORCE MICROSCOPES; HALL MEASUREMENTS; HIGH ENERGY ELECTRON BEAM IRRADIATION; RADIO FREQUENCY (RF) MAGNETRON SPUTTERING;

ALUMINUM; ATOMIC SPECTROSCOPY; ATOMS; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; HIGH ENERGY PHYSICS; IRRADIATION; MAGNETRON SPUTTERING; MICROSCOPES; PHOTOELECTRICITY; PHOTOLUMINESCENCE; PHOTONS; RADIO; RADIO WAVES; SILICON COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77956059821     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.164     Document Type: Conference Paper

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