Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application

IEEE Electron Device Letters

Volumn 30, Issue 1, 2009, Pages 30-32

  Park, C H ^a   Lee, Kwang H ^a   Oh, Min Suk ^a   Lee, Kimoon ^b   Im, Seongil ^a   Lee, Byoung H ^b   Sung, Myung M ^b  

^a Yonsei University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Dual gate (DG); NOR logic gate; Thin film transistors (TFTs); ZnO

Indexed keywords

DENSITY (SPECIFIC GRAVITY); GALERKIN METHODS; LOGIC GATES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC OXIDE;

ATOMIC LAYERS; DUAL GATE (DG); FIELD MOBILITIES; GROUND PLANES; NOR GATES; NOR LOGIC GATE; ON/OFF CURRENT RATIOS; SATURATION CURRENTS; SINGLE GATES; THIN-FILM TRANSISTORS (TFTS); ZNO;

GATE DIELECTRICS;

EID: 58149510095     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2007973     Document Type: Article

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