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Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 3, 2011, Pages 248-251

Electrical and optical properties of P-doped ZnO thin films by annealing temperatures in nitrogen ambient

(4) Kang, Seong Jun a Joung, Yang Hee a Han, Jung Woo b Yoon, Yung Sup b

a Chonnam National University (South Korea)

b Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLINE PROPERTIES; DONOR-ACCEPTOR PAIRS; ELECTRICAL AND OPTICAL PROPERTIES; FREE ELECTRON; FULL WIDTH OF HALF MAXIMUM; HALL EFFECT MEASUREMENT; LOW TEMPERATURES; NEUTRAL ACCEPTORS; NITROGEN AMBIENT; OPTICAL AND ELECTRICAL PROPERTIES; P TYPE ZNO THIN FILM; P-DOPED ZNO; P-TYPE BEHAVIORS; POST-ANNEALING TEMPERATURE; SAPPHIRE SUBSTRATES; THERMAL ACTIVATION PROCESS; XRD;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; HALL EFFECT; MAGNETIC FIELD EFFECTS; METALLIC FILMS; NITROGEN; OPTICAL FILMS; OPTICAL PROPERTIES; PHOSPHORUS; THIN FILMS; ZINC OXIDE;

ANNEALING;

EID: 79751524966 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-010-0123-x Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.