Fabrication of a 34 x 34 crossbar structure at 50 nm half-pitch by UV-based nanoimprint lithography

Nano Letters

Volumn 4, Issue 7, 2004, Pages 1225-1229

  Jung, G Y ^a   Ganapathiappan, S ^a   Ohlberg, Douglas A A ^a   Olynick, Deirdre L ^b   Chen, Y ^a,d   Tong, William M ^a,c   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CHEMICAL ENGINEERING; NANOTECHNOLOGY; PRINTING; ULTRAVIOLET RADIATION;

EID: 4143141855     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl049487q     Document Type: Article

References (9)

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3. Colburn, M.; Johnson, S.; Stewart, M.; Damle, S.; Bailey, T.; Choi, B.; Wedlake, M.; Michaelson, T.; Sreenivasan, S. V.; Ekerdt, J.; Willson, C. G. Proc. SPIE 1999, 3676, 379.
4. Smith, B. J.; Stacey, N. A.; Donnelly, J. P.; Onsongo, D. M.; Bailey, T. C.; Mackay, C. J.; Sreenivasan, S. V.; Banerjee, S. K.; Ekerdt, J. G.; Willson, C. G. Proc. SPIE 2003, 5037, 1029.
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6. Hiroshima, H.; Inoue, S.; Kasahara, N.; Taniguchi, J.; Miyamoto, I.; Komuro, M. Jpn. J. Appl. Phys. 2002, 41, 4173.
7. Jung, G. Y.; Ganapathiappan, S.; Li, X.; Ohlberg, D. A. A.; Olynick, D. L.; Chen, Y.; Tong, W. M.; Williams, R. S. Appl. Phys. A 2004, 78, 1169.
8. Chen, Y.; Ohlberg, D. A. A.; Li, X.; Stewart, D. R.; Williams, R. S. Appl. Phys. Lett. 2003, 82, 1620.
9. Chang, S. C.; Li Z.; Lau, C. N.; Larade, B.; Williams, R. S. Appl. Phys. Lett. 2003, 83, 3198.