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Volumn 17, Issue 19, 2005, Pages 2307-2311

Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices

(8) Tang, Wei a Shi, Huazhong a Xu, Gu a Ong, Beng S b Popovic, Zoran D b Deng, Jiachun c Zhao, Jie d Rao, Guanghui e

a MCMASTER UNIVERSITY (Canada)

b XEROX RESEARCH CENTRE OF CANADA (Canada)

c TIANJIN UNIVERSITY OF TECHNOLOGY (China)

d TIANJIN NORMAL UNIVERSITY (China)

e INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; EVAPORATION; PARTICLE SIZE ANALYSIS; THIN FILMS;

METAL ELECTRODES; SINGLE-ELECTRON TUNNELING;

ELECTRON TUNNELING;

EID: 26844576397 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200500232 Document Type: Article

Times cited : (103)

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