Metal/organic/metal bistable memory devices

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5763-5765

  Tondelier, D ^a   Lmimouni, K ^a   Vuillaume, D ^a   Fery, C ^b   Haas, G ^b  

^a CNRS   (France)

^b FCA UNESP   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; LIGHT EMITTING DIODES; METALLIZING; MIM DEVICES; NANOSTRUCTURED MATERIALS; NETWORKS (CIRCUITS); PHOTOVOLTAIC CELLS; PLASTIC FILMS; SILICA; SILICON WAFERS; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

BISTABLE MEMORY DEVICES; CROSS-BAR STRUCTURES; FILM THICKNESS; MEMORY EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 12844249479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829166     Document Type: Article

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