SCOPUS 정보 검색 플랫폼

Organic Electronics

Volumn 6, Issue 4, 2005, Pages 188-192

Fullerene-based bistable devices and associated negative differential resistance effect

(5) Majumdar, Himadri S a Baral, Jayanta K a Österbacka, Ronald a Ikkala, Olli b Stubb, Henrik a

a ÅBO AKADEMI UNIVERSITY (Finland)

b AALTO UNIVERSITY (Finland)

Author keywords

Conductance switching; Fullerene; Memory applications; Negative differential resistance; Tunneling

Indexed keywords

ALUMINUM; CONCENTRATION (PROCESS); ELECTRIC INSULATORS; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; ELECTRON TUNNELING; POLYSTYRENES; SWITCHING CIRCUITS;

CONDUCTANCE SWITCHING; MEMORY SWITCHING; NEGATIVE DIFFERENTIAL RESISTANCE; SINGLE LAYER DEVICES;

FULLERENES;

EID: 24344500213 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2005.06.005 Document Type: Article

Times cited : (102)

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