Memory effect in the current - Voltage characteristic of 8-hydroquinoline aluminum salt films

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 354-356

  Tu, Chia Hsun ^a   Lai, Yi Sheng ^a   Kwong, Dim Lee ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Memory device; Organic; Resistance switch

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE; SPIN COATING; THIN FILMS; THRESHOLD VOLTAGE;

FILAMENT THEORY; HYDROQUINOLINE ALUMINUM SALT FILMS; RESISTANCE SWITCH; SINGLE LAYER ORGANIC DEVICE; THRESHOLD CURRENT;

DATA STORAGE EQUIPMENT;

EID: 33646268403     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.872915     Document Type: Article

References (17)

1. J. Kevorkian, M. M. Labes, D. C. Larson, and D. C. Wu, "Bistable switching in organic thin films," Discuss. Faraday Soc., vol. N51, pp. 139-143, 1971.
2. R. Sezi, A. Walter, R. Engl, A. Maltenberger, J. Schumann, M. Kund, and C. Dehm, "Organic materials for high-density non-volatile memory applications," in IEDM Tech. Dig., 2003, pp. 10.2.1-10.2.4.
3. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park, "Reproducible resistance switching in polycrystalline NiO films," Appl. Phys. Lett., vol. 85, no. 23, pp. 5655-5657, Dec. 2004.
4. D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, "Threshold switching in chalcogenide-glass thin films," J. Appl. Phys., vol. 51, no. 6, pp. 3289-3309, Jun. 1980.
5. A. Odagawa, H. Sato, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, and H. Adachi, "Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature," Phys. Rev. B, Condens. Matter, vol. 70, no. 22, p. 224403, 2004.
6. C.-Y. Liu, P.-H. Wu, A. Wang, W.-Y. Jang, J.-C. Young, K.-Y. Chiu, and T.-Y. Tseng, "Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/memory film," IEEE Electron Device Lett., vol. 26, no. 6, pp. 351-353, Jun. 2005.
7. A. Bandyopadhyay and A. J. Pal, "Memory-switching phenomenon in acceptor-rich organic molecules: Impedance spectroscopic studies," J. Phys. Chem. B, vol. 109, no. 13, pp. 6084-6088, Apr. 2005.
8. Q. Ling, Y. Song, S. J. Ding, C. Zhu, D. S. H. Chan, D.-L. Kwong, E.-T. Kang, and K. G. Neoh, "Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoate," Adv. Mater., vol. 17, no. 4, pp. 455-459, 2005.
9. C.W. Chu, J. Quyang, J. H. Tseng, and Y. Yang, "Organic donor-acceptor system exhibiting electrical bistability for use in memory devices," Adv. Mater., vol. 17, no. 11, pp. 1440-1443, 2005.
10. L. P. Ma, S. Pyo, J. Ouyang, Q. F. Xu, and Y. Yang, "Nonvolatile electrical bistability of organic/metal-nanocluster/organic system," Appl. Phys. Lett., vol. 82, no. 9, pp. 1419-1421, Mar. 2003.
11. J. Y. Quyang, C. W. Chu, R. J. H. Tseng, A. Prakash, and Y. Yang, "Organic memory device fabricated through solution processing," Proc. IEEE, vol. 93, no. 7, pp. 1287-1296, Jul. 2005.
12. J. Tseng, J. Huang, J. Quyang, R. Kaner, and Y. Yang, "Polyaniline nanofiber/gold nanoparticle nonvolatile memory," Nano Lett., vol. 5, no. 6, pp. 1077-1080, 2005.
13. J. G. Simmons and R. P. Verderber, "New conduction and reversible memory phenomena in thin insulating films," Proc. R. Soc. Lond. A, Math. Phys. Sci., vol. 301, no. 1464, pp. 77-102, Oct. 1967.
14. H. J. Gao, K. Sohlberg, Z. Q. Xue, H. Y. Chen, S. M. Hou, L. P. Ma, X. W. Fang, S. J. Pang, and S. J. Pennycook, "Reversible, nanometer-scale conductance transitions in an organic complex," Phys. Rev. Lett., vol. 84, no. 8, pp. 1780-1783, Feb. 2000.
15. Y. S. Lai, C. H. Tu, D. L. Kwong, and J. S. Chen, "Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications," Appl. Phys. Lett., vol. 87, no. 12, p. 122101, 2005.
16. P. Mark and W. Helfrich, "Space-charge-limited currents in organic crystals," J. Appl. Phys., vol. 33, no. 1, pp. 205-215, Jan. 1962.
17. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, "Electrical phenomena in amorphous oxide films," Rep. Prog. Phys., vol. 33, no. 3, pp. 1129-1191, Sep. 1970.