Electrically bistable memory device based on spin-coated molecular complex thin film

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 151-153

  Liu, Zhengchun ^a   Xue, Fengliang ^a   Su, Yi ^b   Varahramyan, Kody ^a  

^a LOUISIANA TECH UNIVERSITY   (United States)

^b Alpha and Omega Semiconductor   (United States)

Author keywords

6,6 phenyl C61 butyric acid methyl ester (PCBM); Electrical bistability; Memory; Tetracyanoquinodimethane (TCNQ)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DERIVATIVES; ELECTRIC FIELD EFFECTS; ESTERS; SANDWICH STRUCTURES; SPIN COATING; THIN FILMS;

ELECTRICAL BISTABILITY; ELECTRICALLY BISTABLE MEMORY DEVICE; PHENYL BUTYRIC ACID METHYL ESTER; SPIN-COATED MOLECULAR COMPLEX THIN FILM; TETRACYANOQUINODIMETHANE (TCNQ);

DATA STORAGE EQUIPMENT;

EID: 33644619433     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.863568     Document Type: Article

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