An organic-based diode-memory device with rectifying property for crossbar memory array applications

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 487-489

  Teo, Eric Yeow Hwee ^a   Zhang, Chunfu ^a   Lim, Siew L ^a   Kang, En Tang ^a   Chan, Daniel S H ^a   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Memory array; Polymer diode; Polymer memory; Rectifying polymer memory

Indexed keywords

BISTABLE MEMORY; CONDUCTION MODELS; CONDUCTIVITY MECHANISMS; CROSS-BAR MEMORIES; MEMORY ARRAY; MEMORY DEVICE; ON/OFF CURRENT RATIO; PASSIVE MATRIX; POLYMER DIODE; POLYMER MEMORY; RECTIFICATION RATIO; RECTIFYING POLYMER MEMORY; RECTIFYING PROPERTIES;

DIODES; DISTILLATION;

POLYMERS;

EID: 67349285722     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2017387     Document Type: Article

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