Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Microelectronic Engineering

Volumn 88, Issue 11, 2011, Pages 3207-3213

  Park, Hyoungwon ^a   Byeon, Kyeong Jae ^a   Jang, Jong Jin ^b   Nam, Okhyun ^b   Lee, Heon ^a  

^a Korea University   (South Korea)

^b Korea Polytechnic University   (South Korea)

Author keywords

Electroluminescence (EL); GaN based light emitting diodes (LEDs); Nanoimprint lithography (NIL); Nanometer scaled patterned sapphire substrate (NPSS); Photoluminescence (PL)

Indexed keywords

BLUE LED STRUCTURE; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES (LEDS); LED STRUCTURE; LIGHT-EXTRACTION EFFICIENCY; LUMINESCENCE EFFICIENCIES; MULTIPHOTONS; NANO-METER-SCALE; NANOIMPRINT LITHOGRAPHY (NIL); NANOMETER-SCALED PATTERNED SAPPHIRE SUBSTRATE (NPSS); PATTERNED SAPPHIRE SUBSTRATE; PL INTENSITY; SAPPHIRE WAFER;

EFFICIENCY; ELECTROLUMINESCENCE; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT; LIGHT EMISSION; NANOIMPRINT LITHOGRAPHY; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 80053344027     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.07.014     Document Type: Article

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