Epitaxial growth of improved GaN epilayer on sapphire substrate with platinum nanocluster

Journal of Crystal Growth

Volumn 311, Issue 9, 2009, Pages 2655-2658

  Oh, Tae Su ^a   Lee, Yong Seok ^a   Jeong, Hyun ^a   Kim, Jan Di ^a   Seo, Tae Hoon ^a   Lee, Kang Jea ^a   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A1. High resolution X ray diffraction; A1. Photoluminescence; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

A THERMALS; A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A1. PHOTOLUMINESCENCE; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; AFM IMAGES; ASYMMETRY PLANES; ATOMIC-FORCE MICROSCOPIES; B1. NITRIDES; BUFFER ZONES; E-BEAM EVAPORATIONS; FULL WIDTH AT HALF-MAXIMUM; GAN EPILAYERS; GAN LAYERS; INTENSE BANDS; LATERAL GROWTHS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; PLATINUM NANO CLUSTERS; SAPPHIRE SUBSTRATES; TEM; TEM OBSERVATIONS; THICKNESS FLUCTUATIONS; XRD;

ATOMIC FORCE MICROSCOPY; CORUNDUM; DIFFRACTION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANOCLUSTERS; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; PLATINUM; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EVAPORATION; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 65349092735     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.012     Document Type: Article

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