Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2973-2976

  Su, Y K ^a   Chen, J J ^a   Lin, C L ^b   Chen, S M ^b   Li, W L ^a   Kao, C C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

A3. Metalorganic chemical vapor deposition (MOCVD); B1. GaN; B1. Patterned sapphire substrate (PSS); B2. Light emitting diode (LED)

Indexed keywords

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); B1. GAN; B1. PATTERNED SAPPHIRE SUBSTRATE (PSS); B2. LIGHT-EMITTING DIODE (LED); CONVENTIONAL PHOTOLITHOGRAPHY; CRYSTALLINE QUALITY; EXTERNAL QUANTUM EFFICIENCY; FORWARD VOLTAGE; GAN FILM; LIGHT EXTRACTION; LIGHT OUTPUT POWER; NANO SCALE; NANO SPHERE LITHOGRAPHY; NITRIDE BASED LIGHT EMITTING DIODES; PATTERN SIZE; PATTERNED SAPPHIRE SUBSTRATE; SIZE DEPENDENCE;

CORUNDUM; CRYSTALLINE MATERIALS; CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPORS;

LIGHT EMITTING DIODES;

EID: 65749107369     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.055     Document Type: Article

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