Development of strain reduced GaN on Si (111) by substrate engineering

Applied Physics Letters

Volumn 87, Issue 8, 2005, Pages

  Jamil, M ^a   Grandusky, J R ^a   Jindal, V ^a   Shahedipour Sandvik, F ^a   Guha, S ^b   Arif, M ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN IMPLANTED SUBSTRATES; STRESS REDUCTION; SUBSTRATE ENGINEERING;

ALUMINUM NITRIDE; FILM GROWTH; ION IMPLANTATION; MORPHOLOGY; NITROGEN; SILICON;

GALLIUM NITRIDE;

EID: 24344498683     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2012538     Document Type: Article

References (20)

1. S. Guha and N. A. Bojarczuk, Appl. Phys. Lett. 72, 415 (1998).
2. C. A. Tran, A. Osinski, R. F. Karlicek, Jr., and I. Berishev, Appl. Phys. Lett. 75, 1494 (1999).
3. A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksekov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, Appl. Phys. Lett. 72, 551 (1998).
4. A. T. Schremer, J. A. Smart, Y. Wang, O. Ambacher, N. C. MacDonald, and J. R. Shealy, Appl. Phys. Lett. 76, 736 (2000).
5. F. Semond, P. Lorenzini, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 335 (2001).
6. S.-H. Jang, and C.-R. Lee, J. Cryst. Growth 253, 64 (2003).
7. S. Zamir, B. Meyler, and J. Salzman, J. Cryst. Growth 243, 375 (2002).
8. Z. Yang, F. Guarin, I. W. Tao, W. I. Wang, and S. S. Lyer, J. Vac. Sci. Technol. B 13, 789 (1995).
9. A. Dadgar, M. Poschenrieder, J. Blasing, K. Fehse, A. Diez, and A. Krost, Appl. Phys. Lett. 80, 3670 (2002).
10. S. Zamir, B. Meyler, and J. Salzman, Appl. Phys. Lett. 78, 288 (2001).
11. S. Zamir, B. Meyler, and J. Salzman, J. Cryst. Growth 230, 341 (2001).
12. E. K. Koh, Y. J. Park, E. K. Kim, C. S. Park, S. H. Lee, J. H. Lee, and S. H. Choh, J. Cryst. Growth 218, 214 (2000).
13. C. W. Pei, J. B. Heroux, J. Sweet, W. I. Wang, J. Chen, and M. F. Chang. J. Vac. Sci. Technol. B 20, 1196 (2002).
14. L. B. Freund and W. D. Nix, Appl. Phys. Lett. 69, 173 (1996).
15. R. Liu, F. A. Ponce, A. Dadgar, and A. Krost, Appl. Phys. Lett. 83, 860 (2003).
16. K. Y. Zang, L. S. Wang, S. J. Chua, and C. V. Thompson, J. Cryst. Growth 268, 515 (2004).
17. S. Guha, F. Shahedipour, R. C. Keller, V. Yang and B. W. Wessels, Appl. Phys. Lett. 78, 58 (2001).
18. L. S. Wang, K. Y. Zang, S. Tripathy, and S. J. Chua. Appl. Phys. Lett. 85, 5881 (2004).
19. W. Qian. G. S. Rohrer, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 67, 2284 (1995).
20. M. Jamil, J. R. Grandusky, V. Jindal and F. Shahedipour-Sandvik (unpublished).