Sapphire etching with BCl3/HBr/Ar plasma

Surface and Coatings Technology

Volumn 171, Issue 1-3, 2003, Pages 280-284

  Jeong, C H ^a   Kim, D W ^a   Lee, H Y ^a   Kim, H S ^a   Sung, Y J ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

BCl3 HBr Ar; DC bias voltage; Etch rate; Inductive power; Sapphire

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; COMPOSITION; ELECTRIC POTENTIAL; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; SAPPHIRE; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

SAPPHIRE WAFERS;

ETCHING;

ETCHING; PLASMA TREATMENT; SAPPHIRE;

EID: 0038382888     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00286-X     Document Type: Article

References (15)

1. Egawa T. Jimbo T. J. Appl. Phys. 82 11 1997 5816
2. Wong W.S. Sands T. Appl. Phys. Lett. 75 10 1999 1360
3. Nakamura S. Mukai T. Senoh M. Appl. Phys. Lett. 64 1994 1687
4. Nakamura S. Senoh M. Iwasa N. Nagahama S. Yamada T. Mukai T. Jpn. J. Appl. Phys. 34 1995 L1332
5. Mukai T. Yamada M. Nakamura S. Jpn. J. Appl. Phys. 37 1998 L1358
6. Mukai T. Nakamura S. Jpn. J. Appl. Phys. 38 1999 5735
7. Egawa T. Ishikawa H. Jimbo T. Umeno M. Appl. Phys. Lett. 69 6 1996 830
8. Nakamura S. Senoh M. Nagahama S. et-al Jpn. J. Appl. Phys. 35 1996 L74
9. Lester S.D. Ponce F.A. Craford M.G. Steigerwald D.A. Appl. Phys. Lett. 66 1996 1249
10. Jeong C.H. Kim D.W. Bae J.W. et-al Mater. Sci. Eng. B 93 2002 60
11. Jeong C.H. Kim D.W. Kim K.N. Yeom G.Y. Jpn. J. Appl. Phys. 41 2002 6206
12. Sung Y.J. Kim H.S. Lee Y.H. et-al Mater. Sci. Eng. B 82 2001 50
13. Lee R. J. Vac. Sci. Technol. A 16 1979 164
14. Kim J.W. Kim Y.C. Lee W.J. J. Appl. Phys. 78 3 1995 2045
15. Fedison J.B. Chow T.P. Lu H. Bhat I.B. J. Electrochem. Soc. 144 8 1997 L221