High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 50-52

  Sung, Y J ^a   Kim, H S ^b   Lee, Y H ^a   Lee, J W ^c   Chae, S H ^c   Park, Y J ^c   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

BCl3; Cl2; Etch rate; Roughness; Sapphire

Indexed keywords

ADDITION REACTIONS; ARGON; BORON COMPOUNDS; CHLORINE; ELECTRONICS PACKAGING; ETCHING; HARDNESS; PHOTORESISTS; SAPPHIRE; SEMICONDUCTOR PLASMAS; SURFACE ROUGHNESS;

INDUCTIVELY COUPLED PLASMAS; SAPPHIRE WAFERS;

SEMICONDUCTING FILMS;

EID: 0035933209     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00716-9     Document Type: Article

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