Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5170-5174

  Chiu, C H ^a   Li, Zhen Yu ^a   Chao, C L ^a   Lo, M H ^a   Kuo, H C ^a   Yu, P C ^a   Lu, T C ^a   Wang, S C ^a   Lau, K M ^b   Cheng, S J ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Nanoscaled epitaxial lateral overgrowth; B1. GaN

Indexed keywords

CORUNDUM; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NANORODS; NANOSTRUCTURES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SUBSTRATES; VAPORS;

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; A3. NANOSCALED EPITAXIAL LATERAL OVERGROWTH; B1. GAN; DISLOCATION DENSITIES; EFFICIENCY ENHANCEMENTS; ENHANCEMENT FACTORS; EPITAXIAL LATERAL OVERGROWTHS; EXTERNAL QUANTUM EFFICIENCIES; GAN LAYERS; INJECTION CURRENTS; LIGHT EMITTING DIODE LEDS; LIGHT EXTRACTIONS; NANOSCALED; ORGANIC CHEMICAL VAPOR DEPOSITIONS; OUTPUT POWERS; PATTERNED SAPPHIRE SUBSTRATES; RAMAN SHIFTS; SAPPHIRE SUBSTRATES; TUNNELING ELECTRON MICROSCOPES;

GALLIUM ALLOYS;

EID: 56249108693     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.051     Document Type: Article

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