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Volumn 9, Issue 3, 2009, Pages 633-635
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GaN-based light-emitting diodes directly grown on sapphire substrate with holographically generated two-dimensional photonic crystal patterns
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Author keywords
Extraction efficiency; GaN light emitting diodes; Laser holography; Photonic crystals
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Indexed keywords
CORUNDUM;
CRYSTAL ATOMIC STRUCTURE;
CRYSTALS;
CURRENT DENSITY;
DATA RECORDING;
DIODES;
ETCHING;
EXTRACTION;
GALLIUM NITRIDE;
HOLOGRAPHIC INTERFEROMETRY;
HOLOGRAPHY;
LASER RECORDING;
LASERS;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
ORGANIC LIGHT EMITTING DIODES (OLED);
PHOTONIC CRYSTALS;
PLASMA ETCHING;
SAPPHIRE;
SEMICONDUCTING GALLIUM;
SILICON ON INSULATOR TECHNOLOGY;
SUBSTRATES;
TWO DIMENSIONAL;
DRIVE CURRENTS;
EMISSION ENHANCEMENTS;
EXTRACTION EFFICIENCY;
GAN EPILAYERS;
GAN LIGHT-EMITTING DIODES;
HETEROSTRUCTURE;
LASER HOLOGRAPHY;
LED CHIPS;
LIGHT EXTRACTIONS;
OUTPUT POWERS;
PATTERNED SUBSTRATES;
PHOTOLUMINESCENCE MEASUREMENTS;
PHOTONIC CRYSTAL (;
PILLAR ARRAYS;
SAPPHIRE SUBSTRATES;
STRUCTURAL EFFECTS;
SUB MICRONS;
GALLIUM ALLOYS;
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EID: 58149215871
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2008.05.020 Document Type: Article |
Times cited : (30)
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References (16)
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