Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3358-3368

  Zhao, Wen Sheng ^a   Yin, Wen Yan ^a,b   Wang, Xiao Peng ^a   Xu, Xiao Long ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Average power handling capability (APHC); coaxial through silicon vias (C TSVs); coupling; frequency and temperature dependent distributed parameters; lumped element circuit model; metal oxide semiconductor (MOS) capacitance; self heating effects

Indexed keywords

AVERAGE POWER HANDLING CAPABILITIES; LUMPED-ELEMENT CIRCUIT MODEL; METAL OXIDE SEMICONDUCTOR; SELF-HEATING EFFECT; TEMPERATURE DEPENDENT; THROUGH SILICON VIAS;

CAPACITANCE; COUPLINGS; FINITE ELEMENT METHOD; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; SCATTERING PARAMETERS;

THREE DIMENSIONAL;

EID: 80053176840     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2162848     Document Type: Article

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