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Volumn , Issue , 2009, Pages

Electrical modeling of through silicon and package vias

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING; DESIGN GUIDELINES; ELECTRICAL MODELING; ELECTRICAL MODELS; ELECTRICAL PERFORMANCE; ELECTROMAGNETIC SIMULATION; EM SIMULATIONS; HIGH FREQUENCY HF; PARAMETRIC STUDY; THROUGH-SILICON-VIA;

EID: 70549111064     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/3DIC.2009.5306542     Document Type: Conference Paper
Times cited : (108)

References (12)
  • 1
    • 33746875623 scopus 로고    scopus 로고
    • 3-D Silicon Integration and Silicon Packaging Technology Using Silicon Through-Vias
    • August
    • John U. Knickerbocker, et al., "3-D Silicon Integration and Silicon Packaging Technology Using Silicon Through-Vias," IEEE Journal of Solid-State Circuits, Vol. 41, No. 8, August 2006, pp. 1718-1725.
    • (2006) IEEE Journal of Solid-State Circuits , vol.41 , Issue.8 , pp. 1718-1725
    • Knickerbocker, J.U.1
  • 2
    • 33947407658 scopus 로고    scopus 로고
    • Three-Dimensional Integrated Circuits and the Future of System-on-Chip Designs
    • June
    • R. Patti, "Three-Dimensional Integrated Circuits and the Future of System-on-Chip Designs," Proceedings of the IEEE, Vol. 94, No. 6, pp. 1214-1224, June 2006.
    • (2006) Proceedings of the IEEE , vol.94 , Issue.6 , pp. 1214-1224
    • Patti, R.1
  • 3
    • 33646236322 scopus 로고    scopus 로고
    • Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology
    • P. R. Morrow, C.-M. Park, S. Ramanathan, M. J. Kobrinsky, and M. Harmes, "Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology", IEEE Electron Dev. Lett., Vol. 27, No. 5, (2006), pp. 335-337.
    • (2006) IEEE Electron Dev. Lett , vol.27 , Issue.5 , pp. 335-337
    • Morrow, P.R.1    Park, C.-M.2    Ramanathan, S.3    Kobrinsky, M.J.4    Harmes, M.5
  • 7
    • 35348919396 scopus 로고    scopus 로고
    • Dong Min Jang, Chunghyun Ryu, Kwang Yong Lee, Byeong Hoon Cho, Joungho Kim, Tae Sung Oh, Won Jong Lee, and Jin Yu, Development and Evaluation of 3-D SiP with Vertically Interconnected Through Silicon Vias (TSV), Proc. of ECTC 2007, pp. 847-52.
    • Dong Min Jang, Chunghyun Ryu, Kwang Yong Lee, Byeong Hoon Cho, Joungho Kim, Tae Sung Oh, Won Jong Lee, and Jin Yu, "Development and Evaluation of 3-D SiP with Vertically Interconnected Through Silicon Vias (TSV)," Proc. of ECTC 2007, pp. 847-52.
  • 10
    • 44649109376 scopus 로고    scopus 로고
    • World Scientific Publishing Co. Inc, March
    • Narain Arora, Mosfet Modeling for VLSI Simulation, World Scientific Publishing Co. Inc. (March 2007), pp. 150.
    • (2007) Mosfet Modeling for VLSI Simulation , pp. 150
    • Arora, N.1
  • 11
    • 25844453501 scopus 로고    scopus 로고
    • Development of next-generation system-on-package (SOP) technology based on silicon carriers with fine-pitch chip interconnection
    • July/Sepember
    • Knickerbocker et al., "Development of next-generation system-on-package (SOP) technology based on silicon carriers with fine-pitch chip interconnection," IBM J. Res. & Dev., Vol. 49, No. 4/5, July/Sepember 2005, pp 725-53.
    • (2005) IBM J. Res. & Dev , vol.49 , Issue.4-5 , pp. 725-753
    • Knickerbocker1
  • 12
    • 0036904516 scopus 로고    scopus 로고
    • Process Compatible Polysilicon-Based Electrical Through-Wafer Interconnects in Silicon Substrates
    • Dec
    • E.M. Chow, V. Chandrasekaran, A. Partridge, T. Nishida, M. Sheplak, C.F. Quate, and T.W. Kenny, "Process Compatible Polysilicon-Based Electrical Through-Wafer Interconnects in Silicon Substrates," Journal of MEMS, Vol. 11, No. 6, Dec. 2002, pp. 631-40.
    • (2002) Journal of MEMS , vol.11 , Issue.6 , pp. 631-640
    • Chow, E.M.1    Chandrasekaran, V.2    Partridge, A.3    Nishida, T.4    Sheplak, M.5    Quate, C.F.6    Kenny, T.W.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.