Modeling of polysilicon depletion effect in recessed-channel MOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1371-1373

  Kang, Yeonsung ^a   Kim, Heesang ^a   Lee, Jaeho ^a   Son, Younghwan ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

Author keywords

Device modeling; Gate depletion; Poly depletion effect; Polysilicon depletion effect; Recessed channel (RC) MOSFETs

Indexed keywords

DEVICE MODELING; GATE DEPLETION; MOSFETS; POLY-DEPLETION EFFECTS; POLY-SILICON DEPLETION EFFECT;

POLYSILICON; SIMULATORS;

MOSFET DEVICES;

EID: 70549111583     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034278     Document Type: Article

References (7)

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