Multiphysics characterization of transient electrothermomechanical responses of through-silicon vias applied with a periodic voltage pulse

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1382-1389

  Wang, Xiao Peng ^a   Yin, Wen Yan ^a   He, Sailing ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Periodic voltage pulse; Temperature and thermal stress accumulation; Temperature dependent; Through silicon via (TSV); Time domain electrothermomechanical finite element method (FEM); Transient response

Indexed keywords

PERIODIC VOLTAGE PULSE; TEMPERATURE DEPENDENT; THROUGH-SILICON VIA (TSV); TIME DOMAIN; TRANSIENT RESPONSE; VOLTAGE PULSE;

ELECTRONICS PACKAGING; FINITE ELEMENT METHOD; POLYSILICON; RELIABILITY ANALYSIS; SILICON COMPOUNDS; SILICON OXIDES; TEMPERATURE; THERMAL EXPANSION; THERMAL STRESS; THERMOELASTICITY; TRANSIENT ANALYSIS;

TIME DOMAIN ANALYSIS;

EID: 77952742120     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2045676     Document Type: Article

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