Metalorganic vapor phase epitaxy of thick InGaN on sapphire substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3381-3384

  Shimizu, Masaya ^a   Kawaguchi, Yasutoshi ^a   Hiramatsu, Kazumasa ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Buffer layer; Critical thickness; InGaN; Lattice mismatch; Stress

Indexed keywords

BUFFER LAYER; INDIUM GALLIUM NITRIDE; LATTICE MISMATCH;

FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SINGLE CRYSTALS; STRESSES; SUBSTRATES; THICK FILMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031168933     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3381     Document Type: Article

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