In -rich In1-x Gax N films by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6131-6133

  Chang, Chin An ^a   Shih, Chuan Feng ^a,b   Chen, Nai Chuan ^a   Lin, T Y ^c   Liu, Kuo Shiun ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARRIER CONCENTRATION; COMPOSITION; ELECTRON MOBILITY; HALL EFFECT; HETEROJUNCTIONS; INDIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL COMMUNICATION; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAP; HALL MEASUREMENT; SINGLE CRYSTALLINE FILMS; VEGARD'S LAW;

FILM GROWTH;

EID: 20444492408     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1842375     Document Type: Article

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