Model for indium incorporation in the growth of InGaN films

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 85-88

  Piner, E L ^a   McIntosh, F G ^a   Roberts, J C ^a   Boutros, K S ^a   Aumer, M E ^a   Joshkin, V A ^a   El Masry, N A ^a   Bedair, S M ^a   Liu, S X ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ATOMIC LAYER EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030678436     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)