Structural, electronic, and optical properties of nanocrystalline As-doped ZnO films on quartz substrates determined by Raman scattering and infrared to ultraviolet spectra

Thin Solid Films

Volumn 519, Issue 22, 2011, Pages 8166-8172

  Li, W W ^a   Yu, W L ^a   Wu, J D ^b   Gan, J ^b   Zhu, M ^c   Hu, Z G ^a   Chu, J H ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

^c SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Arsenic doped Zinc Oxide; Nanocrystalline Films; Optical Spectroscopy; Pulsed Laser Deposition; Raman Spectroscopy; X ray Diffraction

Indexed keywords

AS DOPING; AVERAGE GRAIN SIZE; DOPING CONCENTRATION; ELECTRONIC TRANSITION; EXPERIMENTAL DATA; FAR-INFRARED; FREE CARRIER CONCENTRATION; HEXAGONAL CRYSTALLINE; LASER POWER; LONGITUDINAL OPTICAL PHONONS; LOWER ENERGIES; NANOCRYSTALLINE FILMS; NANOCRYSTALLINES; OPTICAL SPECTROSCOPY; PHOTON ENERGY RANGE; QUARTZ SUBSTRATE; REFRACTIVE INDEX DISPERSION; SINGLE OSCILLATORS; SPECTRAL TRANSMITTANCE; THEORETICAL CALCULATIONS; TRANSVERSE OPTICAL PHONONS; ZNO FILMS;

ARSENIC; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; INFRARED LASERS; METALLIC FILMS; OPTICAL CONSTANTS; OXIDE FILMS; PHONONS; PULSED LASER DEPOSITION; PULSED LASERS; QUARTZ; RAMAN SCATTERING; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; ULTRAVIOLET LASERS; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

OPTICAL FILMS;

EID: 80052120372     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.05.049     Document Type: Article

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