Raman scattering and photoluminescence of As ion-implanted ZnO single crystal

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 175-179

  Jeong, T S ^a   Han, M S ^a   Youn, C J ^a   Park, Y S ^b  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; DATA REDUCTION; ELECTRODES; FILM GROWTH; ION IMPLANTATION; LIGHT EMITTING DIODES; PARAMETER ESTIMATION; PHONONS; PHOTODISSOCIATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; ZINC OXIDE;

ACCEPTOR HOLES; DONOR-ACCEPTOR PAIRS (DAP); NONRADIATIVE RECOMBINATION; OHMIC BEHAVIOR;

SINGLE CRYSTALS;

EID: 3142749135     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756220     Document Type: Article

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