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Volumn 113, Issue 42, 2009, Pages 18347-18352

Concentration dependence of optical properties in arsenic-doped ZnO nanocrystalline films grown on silicon (100) substrates by pulsed laser deposition

Author keywords

[No Author keywords available]

Indexed keywords

AS DOPING; CONCENTRATION DEPENDENCE; DIELECTRIC FUNCTIONS; DOPANT EFFECTS; DOPED ZNO; ELECTRONIC TRANSITION; EXPERIMENTAL DATA; GRAIN SIZE; GREEN LUMINESCENCE; HEXAGONAL WURTZITE; LOWER ENERGIES; NEAR INFRARED; PHONON FREQUENCIES; PHOTOLUMINESCENCE SPECTRUM; PHOTON ENERGY; POLYCRYSTALLINE; ROOM TEMPERATURE; SILICON (100); SILICON SUBSTRATES; SPECTRAL REFLECTANCES; ZINC VACANCY; ZNO; ZNO FILMS; ZNO NANOCRYSTALLINE FILMS;

EID: 70449558682     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp902766a     Document Type: Article
Times cited : (23)

References (47)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.