Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7884-7887

  Muth, J F ^a   Kolbas, R M ^a   Sharma, A K ^a   Oktyabrsky, S ^a   Narayan, J ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ENERGY GAP; EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; THIN FILMS;

PULSED LASER DEPOSITION (PLD);

SEMICONDUCTING FILMS;

EID: 0032607768     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370601     Document Type: Article

References (27)

1. M. A. Hasse, J. Qui, J. M. DePuydt, and H. Cheng, Appl. Phys. Lett. 59, 1272 (1991).
2. S. Nakamura, M. Senoh, A. Nagahama, N. Iwasa, T. Namada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 1477 (1996).
3. D. C. Reynolds, D. C. Look, B. Jogai, and H. Morkoc, Solid State Commun. 101, 643 (1997).
4. J. Narayan, K. Dovidenko, A. Sharma, and S. Oktyobrsky, J. Appl. Phys. 84, 2597 (1998).
5. J. M. Hvam, Solid State Commun. 12, 95 (1973).
6. F. H. Nicoll, Appl. Phys. Lett. 9, 13 (1966).
7. O. V. Bogdankevich, S. A. Darznek, M. M. Zverev, N. N. Kostin, E. M. Krasavina, I. V. Kryukova, E. V. Markov, V. V. Smirnov, and V. A. Ushakhin, Sov. Tech. Phys. Lett. 11, 54 (1985).
8. D. C. Reynolds, D. C. Look, and B. Jogai, Solid State Commun. 99, 873 (1996).
9. W. D. Johnston, Jr., J. Appl. Phys. 42, 2731 (1971).
10. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
11. Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Appl. Phys. Lett. 72, 3270 (1998).
12. V. Srikant and D. R. Clark, J. Appl. Phys. 81, 6357 (1997).
13. Y. Natsume, H. Sakata, and T. Hirayama, Phys. Status Solidi A 148, 485 (1995).
14. V. Srikant and D. R. Clarke, J. Appl. Phys. 83, 5447 (1998).
15. V. Gupta and A. Mansingh, J. Appl. Phys. 80, 1063 (1996).
16. F. S. Hickernell, 1981 Ultrasonics Symposium Vol. 1, edited by B. R. McAvoy (IEEE, New York, 1981), p. 489.
17. G. E. Jellison, Jr. and L. A. Boatner, Phys. Rev. B 58, 3586 (1998).
18. W. Y. Liang and A. D. Yoffe, Phys. Rev. Lett. 20, 59 (1968).
19. A. Mang, K. Reimann, and St. Rübenacke, Solid State Commun. 94, 251 (1997).
20. H. Sankur and J. T. Cheung, J. Vac. Sci. Technol. A 1, 1806 (1983).
21. J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B. P. Keller, U. K. Mishra, and S. P. Denbaars, Appl. Phys. Lett. 71, 2572 (1997).
22. R. J. Elliott, Phys. Rev. 108, 1384 (1959).
23. D. D. Sell and H. C. Casey, Jr., J. Appl. Phys. 45, 800 (1974).
24. D. G. Thomas, J. Phys. Chem. Solids 15, 86 (1960).
25. J. J. Hopfield, J. Phys. Chem. Solids 15, 97 (1960).
26. J. E. Rowe, M. Cardona, and F. H. Pollak, Solid State Commun. 6, 239 (1968).
27. J. F. Muth, Ph.D. thesis, North Carolina State University, 1998.