Composition and temperature dependence of electronic and optical properties in manganese doped tin dioxide films on quartz substrates prepared by pulsed laser deposition

ACS Applied Materials and Interfaces

Volumn 2, Issue 8, 2010, Pages 2325-2332

  Li, W W ^a   Zhu, J J ^a   Wu, J D ^b   Sun, J ^c   Zhu, M ^a   Hu, Z G ^a   Chu, J H ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

^c SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

optical properties; pulsed laser deposition; SnO2:Mn; temperature dependence

Indexed keywords

3D HYBRIDIZATION; ABSORPTION EDGES; BAND GAP NARROWING; CRYSTALLINE FORMATION; DIELECTRIC FUNCTIONS; DOPING COMPOSITION; ELECTRONIC ENERGIES; FUNDAMENTAL BAND GAP; GRAIN SIZE; IMPURITY PHASE; OPTICAL FUNCTION; PHOTON ENERGY; PHOTON ENERGY RANGE; POLYCRYSTALLINE; QUARTZ SUBSTRATE; RED SHIFT; ROOM TEMPERATURE; SNO2:MN; TEMPERATURE DEPENDENCE; TIN DIOXIDE FILM; TRANSMITTANCE SPECTRA;

DOPING (ADDITIVES); ELECTRON-PHONON INTERACTIONS; ENERGY GAP; MANGANESE; MANGANESE COMPOUNDS; OPTICAL BAND GAPS; PHOTONS; PULSED LASER DEPOSITION; QUARTZ; REFRACTIVE INDEX; TEMPERATURE DISTRIBUTION; TIN; TIN DIOXIDE; TITANIUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

PULSED LASERS;

EID: 79151486025     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am100353f     Document Type: Article

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