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Volumn 106, Issue 2, 2009, Pages

Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/ Al2 O3 (0001) thin films grown by rf-magnetron sputtering

(2) Liu, H F a Chua, S J a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; BIAXIAL STRESS; EPILAYERS GROWN; EPITAXIALLY GROWN; EXCITON ABSORPTION PEAK; EXCITON ABSORPTIONS; EXCITON LOCALIZATION; LOW TEMPERATURES; LOW-TEMPERATURE GROWN; MICROPITS; OPTICAL BAND GAP ENERGY; RADIO FREQUENCY MAGNETRON SPUTTERING; RAMAN MODES; RED SHIFT; RF-MAGNETRON SPUTTERING; RF-POWER; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL-ANNEALING; X- RAY DIFFRACTION; ZNO; ZNO THIN FILM;

ABSORPTION; ANNEALING; EPILAYERS; EXCITONS; LIGHT TRANSMISSION; MAGNETRONS; OPTICAL PROPERTIES; POINT DEFECTS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; STRAIN CONTROL; STRAIN RELAXATION; THIN FILMS;

ZINC OXIDE;

EID: 68249152258 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3176497 Document Type: Article

Times cited : (42)

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