GaN/AlGaN heterojunction infrared detector responding in 8-14 and 20-70 μm ranges

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Ariyawansa, G ^a   Rinzan, M B M ^a   Strassburg, M ^a   Dietz, N ^a   Perera, A G U ^a   Matsik, S G ^b   Asghar, A ^c   Ferguson, I T ^c   Luo, H ^d   Liu, H C ^d  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NDP Optronics LLC   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RESPONSE; FREE CARRIER ABSORPTION; PHOTORESPONSE; SHARP PEAK;

GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTOEMISSION; SILICON;

INFRARED DETECTORS;

EID: 33749489108     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360205     Document Type: Article

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