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Volumn 14, Issue 10, 2011, Pages

Surface passivation of GaAs substrates with SiO2 deposited using ALD

(12) Dalapati, G K a Chia, C K a Mahata, C b Das, T b Maiti, C K b Kumar, M K a Gao, H a Chiam, S Y a Tan, C C a Chua, C T a Cheng, Y B a Chi, D Z a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL MEASUREMENT; GAAS SUBSTRATES; GATE STACKS; OXIDATION STATE; POST DEPOSITION ANNEALING; SURFACE PASSIVATION;

GALLIUM ARSENIDE; HAFNIUM OXIDES; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM; SILICA; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 80051632170 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3615963 Document Type: Article

Times cited : (11)

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